Ge quantum well optoelectronic devices for light modulation, detection, and emissionCHAISAKUL, P; MARRIS-MORINI, D; ISELLA, G et al.Solid-state electronics. 2013, Vol 83, pp 92-98, issn 0038-1101, 7 p.Conference Paper

Morphology evolution of epitaxial SiGe and Si in patternsSEISS, Birgit; DUTARTRE, Didier.Solid-state electronics. 2013, Vol 83, pp 18-24, issn 0038-1101, 7 p.Conference Paper

Strained germanium―tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivationLANXIANG WANG; SHAOJIAN SU; YEO, Yee-Chia et al.Solid-state electronics. 2013, Vol 83, pp 66-70, issn 0038-1101, 5 p.Conference Paper

Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO₂ and GeO₂LUCOVSKY, Gerald.Solid-state electronics. 2013, Vol 83, pp 30-36, issn 0038-1101, 7 p.Conference Paper

Fabrication of bonded GeOI substrates with thin Al₂O₃/SiO₂ buried oxide layersMORIYAMA, Yoshihiko; IKEDA, Keiji; KAMIMUTA, Yuuichi et al.Solid-state electronics. 2013, Vol 83, pp 42-45, issn 0038-1101, 4 p.Conference Paper

n―Si―p-Si_1―xGe_x nanowire arrays for thermoelectric power generationBIN XU; CHUANBO LI; MYRONOV, Maksym et al.Solid-state electronics. 2013, Vol 83, pp 107-112, issn 0038-1101, 6 p.Conference Paper

Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO₂LEONHARDT, Darin; SHENG, Josephine; CEDERBERG, Jeffrey G et al.Thin solid films. 2011, Vol 519, Num 22, pp 7664-7671, issn 0040-6090, 8 p.Article

Analysis of USJ formation with combined RTA/laser annealing conditions for 28 nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulationBAZIZI, E. M; ZAKA, A; BENISTANT, F et al.Solid-state electronics. 2013, Vol 83, pp 61-65, issn 0038-1101, 5 p.Conference Paper

Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETsVANDOOREN, A; LEONELLI, D; ROOYACKERS, R et al.Solid-state electronics. 2013, Vol 83, pp 50-55, issn 0038-1101, 6 p.Conference Paper

Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substratesKASCHEL, Mathias; SCHMID, Marc; GOLLHOFER, Martin et al.Solid-state electronics. 2013, Vol 83, pp 87-91, issn 0038-1101, 5 p.Conference Paper

Terahertz imaging using strained-Si MODFETs as sensorsMEZIANI, Y. M; GARCIA-GARCIA, E; VELAZQUEZ-PEREZ, J. E et al.Solid-state electronics. 2013, Vol 83, pp 113-117, issn 0038-1101, 5 p.Conference Paper

Charge carrier traffic at self-assembled Ge quantum dots on SiKANIEWSKA, M; ENGSTRÖM, O; KARMOUS, A et al.Solid-state electronics. 2013, Vol 83, pp 99-106, issn 0038-1101, 8 p.Conference Paper

Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structureKATO, Kimihiko; SAKASHITA, Mitsuo; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 56-60, issn 0038-1101, 5 p.Conference Paper

Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drainsHARTMANN, J. M; BENEVENT, V; DUTARTRE, D et al.Solid-state electronics. 2013, Vol 83, pp 10-17, issn 0038-1101, 8 p.Conference Paper

Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallizationYINJIE DING; RAN CHENG; QIAN ZHOU et al.Solid-state electronics. 2013, Vol 83, pp 37-41, issn 0038-1101, 5 p.Conference Paper

Selected papers from the 6th International SiGe Technology and Device Meeting (ISTDM 2012)KOESTER, Steven J; KING LIU, Tsu-Jae; HARTMANN, Jean-Michel et al.Solid-state electronics. 2013, Vol 83, issn 0038-1101, 120 p.Conference Proceedings

Epitaxial growth and anisotropic strain relaxation of Ge_1―xSn_x layers on Ge(110) substratesASANO, Takanori; SHIMURA, Yosuke; TAOKA, Noriyuki et al.Solid-state electronics. 2013, Vol 83, pp 71-75, issn 0038-1101, 5 p.Conference Paper

Low temperature RPCVD epitaxial growth of Si_1―xGe_x using Si₂H₆ and Ge₂H₆WIRTHS, S; BUCA, D; TIEDEMANN, A. T et al.Solid-state electronics. 2013, Vol 83, pp 2-9, issn 0038-1101, 8 p.Conference Paper

Capacitance Modeling of Complex Topographical Silicon Quantum Dot StructuresSTALFORD, Harold; YOUNG, Ralph W; NORDBERG, Eric P et al.IEEE transactions on nanotechnology. 2011, Vol 10, Num 4, pp 855-864, issn 1536-125X, 10 p.Article

GaAs/Si epitaxial integration utilizing a two-step, selectively grown Ge intermediate layerCEDERBERG, Jeffrey G; LEONHARDT, Darin; SHENG, Josephine J et al.Journal of crystal growth. 2010, Vol 312, Num 8, pp 1291-1296, issn 0022-0248, 6 p.Conference Paper

Charge Sensed Pauli Blockade in a Metal-Oxide-Semiconductor Lateral Double Quantum DotNGUYEN, Khoi T; LILLY, Michael P; LU, Tzu-Ming et al.Nano letters (Print). 2013, Vol 13, Num 12, pp 5785-5790, issn 1530-6984, 6 p.Article

Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman methodUSUDA, Koji; TEZUKA, Tsutomu; KOSEMURA, Daisuke et al.Solid-state electronics. 2013, Vol 83, pp 46-49, issn 0038-1101, 4 p.Conference Paper

Development of epitaxial growth technology for Ge_1―xSn_x alloy and study of its properties for Ge nanoelectronicsNAKATSUKA, Osamu; SHIMURA, Yosuke; TAKEUCHI, Wakana et al.Solid-state electronics. 2013, Vol 83, pp 82-86, issn 0038-1101, 5 p.Conference Paper

Phosphorus atomic layer doping in Ge using RPCVDYAMAMOTO, Yuji; KURPS, Rainer; MAI, Christian et al.Solid-state electronics. 2013, Vol 83, pp 25-29, issn 0038-1101, 5 p.Conference Paper

The SiGeSn approach towards Si-based lasersSUN, G; YU, S.-Q.Solid-state electronics. 2013, Vol 83, pp 76-81, issn 0038-1101, 6 p.Conference Paper